Infineon IPD Type N-Channel MOSFET, 60 A, 100 V Enhancement, 3-Pin TO-252 IPD60N10S412ATMA1

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 2 units)*

PHP168.21

(exc. VAT)

PHP188.396

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 2,304 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
2 - 8PHP84.105PHP168.21
10 - 98PHP81.585PHP163.17
100 - 248PHP76.69PHP153.38
250 - 498PHP69.785PHP139.57
500 +PHP61.415PHP122.83

*price indicative

Packaging Options:
RS Stock No.:
258-3849
Mfr. Part No.:
IPD60N10S412ATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

100V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12.2mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

94W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

26nC

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS-T2 power-transistor is P-channel normal level enhancement mode. It has 175°C operating temperature.

AEC qualified

MSL1 up to 260°C peak reflow

Related links