Infineon IPD Type N-Channel MOSFET, 67 A, 100 V P, 3-Pin TO-252 IPD12CN10NGATMA1
- RS Stock No.:
- 258-3835
- Mfr. Part No.:
- IPD12CN10NGATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP196.42
(exc. VAT)
PHP220.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 2,474 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP98.21 | PHP196.42 |
| 10 - 98 | PHP95.265 | PHP190.53 |
| 100 - 248 | PHP89.55 | PHP179.10 |
| 250 - 498 | PHP81.49 | PHP162.98 |
| 500 + | PHP71.71 | PHP143.42 |
*price indicative
- RS Stock No.:
- 258-3835
- Mfr. Part No.:
- IPD12CN10NGATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 67A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | IPD | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12.4mΩ | |
| Channel Mode | P | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 67A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series IPD | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12.4mΩ | ||
Channel Mode P | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM
Excellent switching performance
World’s lowest R DS(on)
Environmentally friendly
Increased efficiency
Highest power density
Related links
- Infineon IPD Type N-Channel MOSFET 100 V P, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 40 V P, 3-Pin TO-252
- Infineon IPD Type N-Channel MOSFET 40 V P, 3-Pin TO-252 IPD5N25S3430ATMA1
- Infineon IPD Type N-Channel MOSFET 40 V P, 3-Pin TO-252 IPD80R1K2P7ATMA1
- Infineon IPD Type N-Channel MOSFET 80 V P TO-252
- Infineon IPD Type N-Channel MOSFET 80 V P TO-252 IPD040N08NF2SATMA1
- Infineon IPD Type P-Channel MOSFET 75 V P, 3-Pin TO-252
- Infineon IPD Type P-Channel MOSFET 75 V P, 3-Pin TO-252 IPD380P06NMATMA1