Infineon IPD Type N-Channel MOSFET, 180 A, 40 V P, 3-Pin TO-252 IPD5N25S3430ATMA1

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Subtotal (1 pack of 5 units)*

PHP460.04

(exc. VAT)

PHP515.245

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 5PHP92.008PHP460.04
10 - 95PHP87.494PHP437.47
100 - 245PHP83.198PHP415.99
250 - 495PHP78.898PHP394.49
500 +PHP75.026PHP375.13

*price indicative

Packaging Options:
RS Stock No.:
244-1594
Mfr. Part No.:
IPD5N25S3430ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

180A

Maximum Drain Source Voltage Vds

40V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

P

Maximum Power Dissipation Pd

81W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1.1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon MOSFET OptiMOSTM Power Transistor is a Green product RoHS compliant and is Automotive AEC Q101 qualified.

N-channel - Enhancement mode

MSL1 up to 260°C peak reflow

175°C operating temperature

100% Avalanche tested

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