Infineon HEXFET Type N-Channel MOSFET, 21 A, 30 V PQFN IRFHM830TRPBF
- RS Stock No.:
- 257-9389
- Mfr. Part No.:
- IRFHM830TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP304.78
(exc. VAT)
PHP341.35
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 3,590 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 40 | PHP30.478 | PHP304.78 |
| 50 - 90 | PHP29.564 | PHP295.64 |
| 100 - 490 | PHP28.382 | PHP283.82 |
| 500 - 1990 | PHP26.963 | PHP269.63 |
| 2000 + | PHP25.345 | PHP253.45 |
*price indicative
- RS Stock No.:
- 257-9389
- Mfr. Part No.:
- IRFHM830TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Maximum Power Dissipation Pd | 37W | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Maximum Power Dissipation Pd 37W | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRFHM series is the 30V single n channel strong IRFET power mosfet in a PQFN 3.3x3.3 package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface mount package
Potential alternative to high RDS (on) Super SO 8 package
Related links
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- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 6-Pin DirectFET
- Infineon Dual HEXFET 1 Type N-Channel MOSFET 30 V Enhancement, 8-Pin SO-8
