Infineon HEXFET N-Channel MOSFET, 159 A, 40 V Enhancement PQFN IRFH7440TRPBF
- RS Stock No.:
- 257-9382
- Mfr. Part No.:
- IRFH7440TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
PHP418.50
(exc. VAT)
PHP468.70
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- Plus 3,915 unit(s) shipping from November 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 45 | PHP83.70 | PHP418.50 |
| 50 - 95 | PHP81.19 | PHP405.95 |
| 100 - 495 | PHP76.318 | PHP381.59 |
| 500 - 1995 | PHP69.452 | PHP347.26 |
| 2000 + | PHP61.114 | PHP305.57 |
*price indicative
- RS Stock No.:
- 257-9382
- Mfr. Part No.:
- IRFH7440TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 159A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 2.4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 900mV | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 104W | |
| Typical Gate Charge Qg @ Vgs | 92nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 6mm | |
| Standards/Approvals | RoHS | |
| Height | 900μm | |
| Length | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 159A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 2.4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 900mV | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 104W | ||
Typical Gate Charge Qg @ Vgs 92nC | ||
Maximum Operating Temperature 150°C | ||
Width 6mm | ||
Standards/Approvals RoHS | ||
Height 900μm | ||
Length 5mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 40V Maximum Drain-Source Voltage, 159A Maximum Continuous Drain Current - IRFH7440TRPBF
This MOSFET is an enhancement-mode N-channel power transistor designed for high-current switching in surface-mounted applications. It operates across a broad temperature range and conforms to RoHS requirements, making it suitable for environments where compact, low-resistance switching is required without automotive certification constraints.
Features and Benefits:
• 2.4mΩ Rds(on) lowers conduction losses
• 104W Pd enables sustained power handling
• 159A continuous current supports heavy loads
• 92 nC gate charge balances drive speed and control
• 20V Vgs max provides gate overvoltage protection
• 104W Pd enables sustained power handling
• 159A continuous current supports heavy loads
• 92 nC gate charge balances drive speed and control
• 20V Vgs max provides gate overvoltage protection
Applications
• Suitable for high-current DC power stages
• Ideal for switch-mode power supplies
• Used with Compact thermal management systems
• Can be used for motor-drive inverter legs
• Used for synchronous rectification in converters
• Ideal for switch-mode power supplies
• Used with Compact thermal management systems
• Can be used for motor-drive inverter legs
• Used for synchronous rectification in converters
What mounting style does it require?
It is supplied in a PQFN package intended for surface-mount assembly.
What thermal range can it withstand during operation?
It is rated to function from -55°C up to 150°C.
How does its forward voltage affect efficiency?
Its forward voltage of 0.9V reduces voltage drop during conduction, affecting overall system losses.
Is it suitable for automotive-qualified designs?
It is not qualified to automotive standards and should not be selected where automotive certification is required.
Related links
- Infineon HEXFET N-Channel MOSFET 40 V Enhancement PQFN IRFH7440TRPBF
- Infineon HEXFET N-Channel MOSFET 30 V Enhancement PQFN IRLHS6376TRPBF
- Infineon HEXFET N-Channel MOSFET 20 V Enhancement PQFN IRLHS6242TRPBF
- Infineon HEXFET N-Channel MOSFET & Diode 30 V Enhancement, 8-Pin PQFN
- Infineon HEXFET N-Channel MOSFET & Diode 30 V Enhancement, 8-Pin PQFN IRFHS8342TRPBF
- Vishay Symmetric Dual N Channel 2 N-Channel MOSFET 40 V, 8-Pin PowerPAIR 6 x 5FS SIZF640DT-T1-GE3
- Infineon HEXFET N-Channel MOSFET & Diode 30 V Enhancement, 8-Pin PQFN
- Infineon HEXFET N-Channel MOSFET 25 V Enhancement, 4-Pin PQFN