Infineon HEXFET Type N-Channel MOSFET, 67 A, 60 V Micro8 IRF6674TRPBF
- RS Stock No.:
- 257-9298
- Mfr. Part No.:
- IRF6674TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP248.53
(exc. VAT)
PHP278.354
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 4,626 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 48 | PHP124.265 | PHP248.53 |
| 50 - 98 | PHP120.54 | PHP241.08 |
| 100 - 498 | PHP113.305 | PHP226.61 |
| 500 - 1998 | PHP103.105 | PHP206.21 |
| 2000 + | PHP90.735 | PHP181.47 |
*price indicative
- RS Stock No.:
- 257-9298
- Mfr. Part No.:
- IRF6674TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 67A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | HEXFET | |
| Package Type | Micro8 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 89W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 67A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series HEXFET | ||
Package Type Micro8 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 89W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon IRF series is the 60V single n channel strong IRFET power mosfet in a direct FET mx package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
High current rating
dual-side cooling capability
Low package height of 0.7mm
Low parasitic (1 to 2 nH) inductance package
100 percent lead free (No RoHS exemption)
Related links
- Infineon HEXFET Type N-Channel MOSFET 60 V Micro8
- Infineon HEXFET Type N-Channel MOSFET 150 V, 15-Pin DirectFET
- Infineon HEXFET Type N-Channel MOSFET 150 V, 15-Pin DirectFET IRF7779L2TRPBF
- onsemi NVMFS5H663NL Type N-Channel MOSFET 60 V Enhancement, 5-Pin DFN
- onsemi NVMFS5H663NL Type N-Channel MOSFET 60 V Enhancement, 5-Pin DFN NVMFS5H663NLT1G
- Infineon HEXFET Type N-Channel MOSFET 60 V PQFN
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-220
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252