Vishay SIZ260DT Type N-Channel MOSFET, 8.9 A, 80 V, 8-Pin PowerPAIR 3 x 3S SIZ260DT-T1-GE3
- RS Stock No.:
- 256-7437
- Mfr. Part No.:
- SIZ260DT-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
PHP395.00
(exc. VAT)
PHP442.40
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 2,675 unit(s) shipping from June 22, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 45 | PHP79.00 | PHP395.00 |
| 50 - 95 | PHP76.63 | PHP383.15 |
| 100 - 245 | PHP72.032 | PHP360.16 |
| 250 - 995 | PHP65.55 | PHP327.75 |
| 1000 + | PHP57.686 | PHP288.43 |
*price indicative
- RS Stock No.:
- 256-7437
- Mfr. Part No.:
- SIZ260DT-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.9A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAIR 3 x 3S | |
| Series | SIZ260DT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0247Ω | |
| Typical Gate Charge Qg @ Vgs | 6.3nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 33W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | +150°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Width | 3.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.9A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAIR 3 x 3S | ||
Series SIZ260DT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0247Ω | ||
Typical Gate Charge Qg @ Vgs 6.3nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 33W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature +150°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Width 3.3mm | ||
Automotive Standard No | ||
Vishay SIZ260DT Series MOSFET, 80V Drain Source Voltage, 8.9A Continuous Drain Current - SIZ260DT-T1-GE3
This MOSFET is a surface-mount N-channel transistor designed for switching and power management in industrial electronic systems. It operates at elevated temperatures and supports moderate continuous currents, making it suitable for Compact assemblies where thermal resilience and voltage handling are required.
Features and Benefits:
• 80V drain rating enables use in medium-voltage circuits
• 8.9A continuous current allows sustained load driving
• 0.0247Ω Rds(on) reduces conduction losses
• 6.3nC typical gate charge supports fast switching
• 33W power dissipation permits higher power handling
• ±20V gate tolerance accommodates varied gate-drive ranges
• 8.9A continuous current allows sustained load driving
• 0.0247Ω Rds(on) reduces conduction losses
• 6.3nC typical gate charge supports fast switching
• 33W power dissipation permits higher power handling
• ±20V gate tolerance accommodates varied gate-drive ranges
Applications
• Suitable for DC-DC converters in automation equipment
• Ideal for motor-driver stages in industrial drives
• Used for power switching in control modules
• Can be used for load switching in battery management
• Suitable for Compact SMD power assemblies in electrical systems
• Ideal for motor-driver stages in industrial drives
• Used for power switching in control modules
• Can be used for load switching in battery management
• Suitable for Compact SMD power assemblies in electrical systems
What temperature extremes can it withstand during operation?
It is rated to operate down to -55°C and up to +150°C, allowing use in environments with wide thermal fluctuations.
How does the package form affect PCB layout?
The PowerPAIR 3x3S SMD package with eight pins concentrates power and signal pins for short thermal paths and straightforward thermal-pad design.
Is this device appropriate for automotive applications?
It is not specified as meeting automotive standards, so it should not be selected where formal automotive-grade approval is required.
What are the benefits of the device’s pin count for circuit design?
The eight-pin arrangement separates gate and source connections from power paths, simplifying gate-drive routing and thermal management.
Related links
- Vishay Type N-Channel MOSFET 80 V PowerPAIR 3 x 3S
- Vishay Dual SiZ270DT 2 Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAIR 3 x 3S
- Vishay Dual TrenchFET Gen IV 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAIR 3 x 3S
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAIR 3 x 3S
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAIR 3 x 3S
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAIR 3 x 3S
- Vishay Dual SiZ270DT 2 Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAIR 3 x 3S SIZ270DT-T1-GE3
- Vishay Dual TrenchFET Gen IV 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAIR 3 x 3S SiZ240DT-T1-GE3