Vishay SI1427EDH Type P-Channel MOSFET, -2 A, -20 V, 6-Pin SC-70 SI1427EDH-T1-GE3
- RS Stock No.:
- 256-7341
- Mfr. Part No.:
- SI1427EDH-T1-GE3
- Manufacturer:
- Vishay
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PHP590.50
(exc. VAT)
PHP661.25
(inc. VAT)
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- 2,825 unit(s) shipping from August 10, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | PHP23.62 | PHP590.50 |
| 50 - 75 | PHP22.912 | PHP572.80 |
| 100 - 225 | PHP21.537 | PHP538.43 |
| 250 - 975 | PHP19.598 | PHP489.95 |
| 1000 + | PHP17.246 | PHP431.15 |
*price indicative
- RS Stock No.:
- 256-7341
- Mfr. Part No.:
- SI1427EDH-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -2A | |
| Maximum Drain Source Voltage Vds | -20V | |
| Package Type | SC-70 | |
| Series | SI1427EDH | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.165Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8V | |
| Typical Gate Charge Qg @ Vgs | 7.6nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 2.8W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -2A | ||
Maximum Drain Source Voltage Vds -20V | ||
Package Type SC-70 | ||
Series SI1427EDH | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.165Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8V | ||
Typical Gate Charge Qg @ Vgs 7.6nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 2.8W | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Vishay SI1427EDH Series MOSFET, 20V Maximum Drain Source Voltage, 2A Maximum Continuous Drain Current - SI1427EDH-T1-GE3
This p-channel MOSFET is a surface-mount semiconductor intended for switching and power-management roles in compact electronic assemblies. It operates across a wide temperature span suitable for demanding conditions and is provided in a low-profile package for space-constrained board designs.
Features and Benefits:
• Low Rds(on) 0.165Ω for reduced conduction losses
• Continuous drain current rating of 2A for medium-power switching
• Drain-source voltage rating of 20V enables low-voltage systems
• Typical gate charge 7.6 nC for predictable switching performance
• Forward voltage of -1.2V minimises voltage drop during conduction
• RoHS compliant for use in regulated manufacturing environments
• Continuous drain current rating of 2A for medium-power switching
• Drain-source voltage rating of 20V enables low-voltage systems
• Typical gate charge 7.6 nC for predictable switching performance
• Forward voltage of -1.2V minimises voltage drop during conduction
• RoHS compliant for use in regulated manufacturing environments
Applications
• Suitable for battery-protection and load-switch circuits
• Ideal for handheld and portable device power paths
• Used with DC-DC converters in compact assemblies
• Can be used for reverse-current blocking in power rails
• Suitable for low-voltage motor-control gate arrangements
• Ideal for handheld and portable device power paths
• Used with DC-DC converters in compact assemblies
• Can be used for reverse-current blocking in power rails
• Suitable for low-voltage motor-control gate arrangements
What package considerations affect board layout?
It is supplied in an SC-70 package with six pins, permitting tight pad arrangements and straightforward reflow soldering for dense surface-mount designs.
How does thermal performance influence cooling requirements?
Maximum power dissipation is 2.8 W, so PCB copper area and thermal vias should be sized to remove heat when operating near that dissipation level.
What gate limitations must designers observe?
The gate must not exceed 8V relative to the source to avoid damaging the device, and the typical gate charge of 7.6 nC guides driver selection.
How does the device cope with extreme ambient conditions?
It is rated to function from -55 °C up to +150 °C, permitting use where wide thermal endurance is required.
Related links
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- Vishay Si1441EDH Type P-Channel MOSFET 20 V Enhancement, 6-Pin SC-70 SI1441EDH-T1-GE3
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