DiodesZetex DMP Type P-Channel MOSFET, 10.7 A, 12 V Enhancement, 3-Pin X1-DFN1006-3 DMP2900UFB-7B
- RS Stock No.:
- 254-8624
- Mfr. Part No.:
- DMP2900UFB-7B
- Manufacturer:
- DiodesZetex
This image is representative of the product range
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Subtotal (1 pack of 25 units)*
PHP163.60
(exc. VAT)
PHP183.225
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 9,500 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 475 | PHP6.544 | PHP163.60 |
| 500 - 975 | PHP5.89 | PHP147.25 |
| 1000 - 2475 | PHP5.301 | PHP132.53 |
| 2500 - 4975 | PHP4.771 | PHP119.28 |
| 5000 + | PHP4.294 | PHP107.35 |
*price indicative
- RS Stock No.:
- 254-8624
- Mfr. Part No.:
- DMP2900UFB-7B
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | DMP | |
| Package Type | X1-DFN1006-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 1.73W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 123nC | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 0.67 mm | |
| Height | 5.3mm | |
| Length | 1.07mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series DMP | ||
Package Type X1-DFN1006-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 1.73W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 123nC | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature 175°C | ||
Width 0.67 mm | ||
Height 5.3mm | ||
Length 1.07mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The DiodeZetex P channel enhancement mode MOSFET has been designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is applicable in load switches and po
Low on resistance
Fast switching speed
Halogen and antimony Free
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