Vishay N-Channel MOSFET, 430 A, 80 V Enhancement, 8-Pin PowerPAK (8x8LR) SQJQ184E-T1_GE3

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Packaging Options:
RS Stock No.:
252-0312P
Mfr. Part No.:
SQJQ184E-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

430A

Maximum Drain Source Voltage Vds

80V

Package Type

PowerPAK (8x8LR)

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0014mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

214W

Typical Gate Charge Qg @ Vgs

43nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

175°C

Length

6.15mm

Standards/Approvals

No

Width

4.9mm

Automotive Standard

AEC-Q101

The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.

TrenchFET power MOSFET

AEC-Q101 qualified

100 % Rg and UIS tested

Thin 1.9 mm height

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