Infineon IPW Type P-Channel MOSFET, 60 A, 40 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 250-0597
- Mfr. Part No.:
- IPW65R060CFD7XKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 30 units)*
PHP9,073.80
(exc. VAT)
PHP10,162.80
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- Plus 90 unit(s) shipping from August 31, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 30 - 30 | PHP302.46 | PHP9,073.80 |
| 60 - 60 | PHP293.386 | PHP8,801.58 |
| 90 + | PHP281.651 | PHP8,449.53 |
*price indicative
- RS Stock No.:
- 250-0597
- Mfr. Part No.:
- IPW65R060CFD7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-247 | |
| Series | IPW | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-247 | ||
Series IPW | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 650V CoolMOS CFD7 extends the voltage class offering of the CFD7 family and is a success or to the 650V CoolMOS CFD2. Resulting from improved switching performance and excellent thermal behaviour. It offers highest efficiency in resonant switching topologies, such as LLC and phase-shift-full-bridge(ZVS). As part of Infineon’s fast body diode portfolio, this new product series blends all advantages of a fast switching technology together with superior hard commutation robustness. The technology meets highest efficiency and reliability standards and furthermore supports high power density solutions.
Excellent hard commutation ruggedness
Extra safety margin for designs with increased bus voltage
Outstanding light load efficiency in industrial SMPS applications
Improved full load efficiency in industrial SMPS applications
Related links
- Infineon IPW Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-247 IPW65R060CFD7XKSA1
- Infineon IPW Type N-Channel MOSFET 75 V, 3-Pin TO-247
- Infineon IPW Type N-Channel MOSFET 75 V, 3-Pin TO-247 IPW60R045CPAFKSA1
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247
- Infineon IPW Type N-Channel MOSFET 600 V Enhancement, 3-Pin PG-TO-247 IPW60R037CM8XKSA1
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247 IPW65R099CFD7AXKSA1
- Infineon IPW Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO-247 IPW65R115CFD7AXKSA1