Infineon BSS N-Channel MOSFET, 100 mA, 250 V Depletion, 3-Pin SOT-23 BSS139H6327XTSA1
- RS Stock No.:
- 250-0543
- Mfr. Part No.:
- BSS139H6327XTSA1
- Manufacturer:
- Infineon
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PHP33,612.00
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PHP37,644.00
(inc. VAT)
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- 6,000 unit(s) shipping from February 18, 2027
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Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | PHP11.204 | PHP33,612.00 |
| 6000 - 6000 | PHP10.084 | PHP30,252.00 |
| 9000 + | PHP9.075 | PHP27,225.00 |
*price indicative
- RS Stock No.:
- 250-0543
- Mfr. Part No.:
- BSS139H6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 100mA | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | SOT-23 | |
| Series | BSS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 30000mΩ | |
| Channel Mode | Depletion | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 100mA | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type SOT-23 | ||
Series BSS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 30000mΩ | ||
Channel Mode Depletion | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon BSS Series MOSFET, 250V Maximum Drain-Source Voltage, 0.1A Maximum Continuous Drain Current - BSS139H6327XTSA1
This MOSFET is a depletion-mode N‑channel transistor designed for surface-mount applications where controlled low-current switching at high voltage is required. It operates across a broad ambient range and suits Compact SOT-23 footprints in systems that demand automotive qualification and RoHS‑compliant components.
Features and Benefits:
• 250V Maximum drain-source voltage enables high-voltage switching
• 30 000mΩ Maximum drain-source resistance reduces on-state voltage drop
• 81W Maximum power dissipation supports short-duration thermal loads
• 80 nC Typical gate charge offers predictable gate-drive requirements
• ±20V Maximum gate-source voltage permits robust gate‑drive headroom
• 30 000mΩ Maximum drain-source resistance reduces on-state voltage drop
• 81W Maximum power dissipation supports short-duration thermal loads
• 80 nC Typical gate charge offers predictable gate-drive requirements
• ±20V Maximum gate-source voltage permits robust gate‑drive headroom
Applications
• Suitable for high-voltage analogue biasing circuits
• Ideal for low-current control in sensor interfaces
• Used in automotive electronics requiring AEC‑Q101 compliance
• Can be used for Compact SOT-23 surface-mount designs
• Suitable for temperature-stable systems across wide ranges
• Ideal for low-current control in sensor interfaces
• Used in automotive electronics requiring AEC‑Q101 compliance
• Can be used for Compact SOT-23 surface-mount designs
• Suitable for temperature-stable systems across wide ranges
What temperature range can it operate within?
It functions from -55°C up to +150°C.
How many terminals does the package provide?
The device is supplied in a three‑pin SOT-23 package.
What is the typical channel conduction mode and type?
It uses a depletion channel in an N‑type configuration.
Which standards or approvals does it meet?
It complies with RoHS and meets automotive AEC‑Q101 criteria.
What is the typical gate charge at rated gate drive?
The gate charge is typically 80 nC at the specified gate conditions.
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