Infineon BSD Type P-Channel MOSFET, -0.39 A, 40 V Enhancement, 6-Pin SOT-363 BSD223PH6327XTSA1

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PHP99.75

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PHP111.72

(inc. VAT)

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Units
Per Unit
Per Pack*
10 - 10PHP9.975PHP99.75
20 - 90PHP8.97PHP89.70
100 - 240PHP8.08PHP80.80
250 - 490PHP7.282PHP72.82
500 +PHP6.551PHP65.51

*price indicative

Packaging Options:
RS Stock No.:
250-0521
Mfr. Part No.:
BSD223PH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

-0.39A

Maximum Drain Source Voltage Vds

40V

Series

BSD

Package Type

SOT-363

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

81W

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon highly innovative OptiMOS™ families include enhancement mode mosfet with Super logic level. It is avalanche and dv/dt rated. It offers fast switching. The device is Pb-free and Halogen-free. The Vds is -20 V, Rds(on) is 1.2 Ω while the Id is -0.39 A.

Consistently meet the highest quality and performance demands

Great on-state resistance and figure of merit characteristics

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