Infineon iPB Type N-Channel MOSFET, 80 A, 75 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 249-6905
- Mfr. Part No.:
- IPB80N08S2L07ATMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 reel of 1000 units)*
PHP158,584.00
(exc. VAT)
PHP177,614.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 1,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | PHP158.584 | PHP158,584.00 |
| 2000 - 2000 | PHP142.725 | PHP142,725.00 |
| 3000 + | PHP128.453 | PHP128,453.00 |
*price indicative
- RS Stock No.:
- 249-6905
- Mfr. Part No.:
- IPB80N08S2L07ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | iPB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series iPB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
75V, N-Ch, 6.8 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™
The Infineon OptiMOS is power MOSFET for automotive applications. Operating channel is N. It is AEC Q101 qualified. MSL1 up to 260°C peak reflow. Green Product (RoHS compliant) and it is 100% Avalanche tested.
Summary of Features
•N-channel Logic Level - Enhancement mode
•Automotive AEC Q101 qualified
•MSL1 up to 260°C peak reflow
•175°C operating temperature
•Green package (lead free)
•Ultra low Rds(on)
•100% Avalanche tested
Benefits
•world's lowest RDS at 75V (on) in planar technology
•highest current capability
•lowest switching and conduction power losses for highest thermal efficiency
•robust packages with superior quality and reliability
•Optimized total gate charge enables smaller driver output stages
Potential Applications
•Valves control
•Solenoids control
•Lighting
•Single-ended motors
Related links
- Infineon iPB Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-263 IPB80N08S2L07ATMA1
- Infineon iPB Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Infineon iPB Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 IPB80N06S4L07ATMA2
- Infineon iPB Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-263
- Infineon iPB Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-263
- Infineon iPB Type N-Channel MOSFET 950 V Enhancement, 3-Pin TO-263
- Infineon iPB Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-263
- Infineon iPB Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-263
