ROHM RCJ331N25 Type N-Channel MOSFET, 10.7 A, 250 V Enhancement, 3-Pin TO-263 RCJ331N25TL
- RS Stock No.:
- 249-1131
- Mfr. Part No.:
- RCJ331N25TL
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP388.36
(exc. VAT)
PHP434.96
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 64 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 48 | PHP194.18 | PHP388.36 |
| 50 - 98 | PHP174.825 | PHP349.65 |
| 100 - 248 | PHP165.775 | PHP331.55 |
| 250 - 498 | PHP162.345 | PHP324.69 |
| 500 + | PHP143.30 | PHP286.60 |
*price indicative
- RS Stock No.:
- 249-1131
- Mfr. Part No.:
- RCJ331N25TL
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-263 | |
| Series | RCJ331N25 | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.7mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 104W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-263 | ||
Series RCJ331N25 | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.7mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 104W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ROHM N channel power MOSFET with low on-resistance and fast switching, suitable for the switching application, has 250 V drain-source voltage and 33 A drain current, taping packing type.
Low on-resistance
Fast switching speed
Parallel use is easy
Pb-free plating RoHs compliant
100 percent avalanche tested
Drive circuits can be simple
Related links
- ROHM RCJ331N25 Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263
- ROHM RCJ451N20 Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 RCJ451N20TL
- ROHM RCJ451N20 Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- ROHM Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220AB
- ROHM R6515KNX3 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 R6515KNX3C16
- ROHM R6520KNX3 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 R6520KNX3C16
- ROHM R6524KNX3 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 R6524KNX3C16
- ROHM R6515KNX3 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220