Infineon IMBG Type N-Channel MOSFET, 64 A, 75 V N, 7-Pin TO-263 IMBG65R083M1HXTMA1
- RS Stock No.:
- 248-9323
- Mfr. Part No.:
- IMBG65R083M1HXTMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
PHP382.66
(exc. VAT)
PHP428.58
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 980 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 9 | PHP382.66 |
| 10 - 99 | PHP344.43 |
| 100 - 249 | PHP309.83 |
| 250 - 499 | PHP278.84 |
| 500 + | PHP251.08 |
*price indicative
- RS Stock No.:
- 248-9323
- Mfr. Part No.:
- IMBG65R083M1HXTMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-263 | |
| Series | IMBG | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-263 | ||
Series IMBG | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon SiC MOSFET is a 650 V CoolSiC is built over the solid silicon carbide technology, leveraging the wide bandgap SiC material characteristics, the 650 V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use, suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.
Optimized switching behaviour at higher currents
Commutation robust fast body diode with low Qf
Superior gate oxide reliability
Tj,max-175°C and excellent thermal behaviour
Lower RDS(on) and pulse current dependency on temperature
Increased avalanche capability
Compatible with standard drivers
Kelvin source provides upto 4 times lower switching losses
Related links
- Infineon IMBG Type N-Channel MOSFET 75 V N, 7-Pin TO-263
- Infineon IMBG Type N-Channel MOSFET 75 V N, 7-Pin TO-263 IMBG65R072M1HXTMA1
- Infineon IMBG Type N-Channel MOSFET 75 V N, 7-Pin TO-263 IMBG65R057M1HXTMA1
- Infineon IMBG Type N-Channel MOSFET 75 V N, 7-Pin TO-263 IMBG65R163M1HXTMA1
- Infineon IMBG Type N-Channel MOSFET 75 V N, 7-Pin TO-263 IMBG65R030M1HXTMA1
- Infineon IMBG Type N-Channel MOSFET 75 V N, 7-Pin TO-263 IMBG65R022M1HXTMA1
- Infineon IMBG Type N-Channel MOSFET 75 V N, 7-Pin TO-263 IMBG65R048M1HXTMA1
- Infineon IMBG Type N-Channel MOSFET 75 V N, 7-Pin TO-263 IMBG65R260M1HXTMA1