onsemi SiC Power Module, 1200 V F1-2PACK NXH010P120MNF1PTG

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Bulk discount available

Subtotal 2 units (supplied in a tray)*

PHP27,207.56

(exc. VAT)

PHP30,472.46

(inc. VAT)

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  • Plus 28 unit(s) shipping from December 29, 2025
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Units
Per Unit
2 - 4PHP13,603.78
5 - 9PHP13,331.71
10 - 14PHP13,065.09
15 +PHP12,803.78

*price indicative

Packaging Options:
RS Stock No.:
248-5824P
Mfr. Part No.:
NXH010P120MNF1PTG
Manufacturer:
onsemi
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Brand

onsemi

Product Type

SiC Power Module

Maximum Drain Source Voltage Vds

1200V

Package Type

F1-2PACK

Mount Type

Through Hole

Maximum Power Dissipation Pd

250W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

SiC Module - EliteSiC 2-PACK Half Bridge Topology, 1200 V, 10 mohm SiC M1 MOSFET Press-fit pins, Thermal Interface Material


The ON Semiconductor is a power module containing an 10 mohm/1200 V SiC MOSFET half bridge and a thermistor in an F1 package.

10 mohm/1200 V SiC MOSFET half bridge

Options with pre−applied thermal interface material and without pre−applied TIM

Press−fit pins

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