DiodesZetex Type P-Channel MOSFET, 9 A, 30 V Enhancement, 8-Pin PowerDI5060-8 DMT36M1LPS-13
- RS Stock No.:
- 246-7552
- Mfr. Part No.:
- DMT36M1LPS-13
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP586.625
(exc. VAT)
PHP657.025
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 5,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | PHP23.465 | PHP586.63 |
| 50 - 75 | PHP22.992 | PHP574.80 |
| 100 - 225 | PHP17.494 | PHP437.35 |
| 250 + | PHP17.145 | PHP428.63 |
*price indicative
- RS Stock No.:
- 246-7552
- Mfr. Part No.:
- DMT36M1LPS-13
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerDI5060-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.025Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.73W | |
| Maximum Operating Temperature | 175°C | |
| Height | 1mm | |
| Length | 6.15mm | |
| Width | 5.15 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerDI5060-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.025Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.73W | ||
Maximum Operating Temperature 175°C | ||
Height 1mm | ||
Length 6.15mm | ||
Width 5.15 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in powerDI5060-8 packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application. It has an excellent Qgd xRDS(ON) product (FOM) and advanced technology for DC-DC conversion.
Maximum drain to source voltage is 30 V Maximum gate to source voltage is ±20 V It provides small form factor thermally and efficient package enables higher density end products It occupies just 33% of the board area occupied by SO-8 enabling smaller end product
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