DiodesZetex 2 Type N-Channel MOSFET, 20 V Enhancement, 6-Pin SOT-363 DMN2710UDW-7

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Subtotal (1 pack of 25 units)*

PHP154.125

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PHP172.625

(inc. VAT)

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Units
Per Unit
Per Pack*
25 - 25PHP6.165PHP154.13
50 - 75PHP5.548PHP138.70
100 - 225PHP4.994PHP124.85
250 - 975PHP4.494PHP112.35
1000 +PHP4.044PHP101.10

*price indicative

Packaging Options:
RS Stock No.:
246-7513
Mfr. Part No.:
DMN2710UDW-7
Manufacturer:
DiodesZetex
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Brand

DiodesZetex

Product Type

MOSFET

Channel Type

Type N

Maximum Drain Source Voltage Vds

20V

Package Type

SOT-363

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

0.75Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

6 V

Maximum Power Dissipation Pd

0.36W

Typical Gate Charge Qg @ Vgs

0.6nC

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Number of Elements per Chip

2

Automotive Standard

No

The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in SOT363 packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application.

Maximum drain to source voltage is 20 V and Maximum gate to source voltage is ±6 V It offers a ultra-small package size It has low input/output leakage

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