onsemi NTM Type N-Channel MOSFET, 58 A, 1200 V N, 5-Pin DFN NTMFS6H824NT1G
- RS Stock No.:
- 244-9187
- Mfr. Part No.:
- NTMFS6H824NT1G
- Manufacturer:
- onsemi
This image is representative of the product range
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Subtotal (1 pack of 2 units)*
PHP221.16
(exc. VAT)
PHP247.70
(inc. VAT)
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In Stock
- Plus 1,464 unit(s) shipping from May 18, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP110.58 | PHP221.16 |
| 10 - 98 | PHP107.265 | PHP214.53 |
| 100 - 248 | PHP100.835 | PHP201.67 |
| 250 - 498 | PHP91.76 | PHP183.52 |
| 500 + | PHP80.755 | PHP161.51 |
*price indicative
- RS Stock No.:
- 244-9187
- Mfr. Part No.:
- NTMFS6H824NT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | DFN | |
| Series | NTM | |
| Mount Type | Through Hole | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Power Dissipation Pd | 117W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type DFN | ||
Series NTM | ||
Mount Type Through Hole | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Power Dissipation Pd 117W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor MOSFET Drain−to−Source Voltage is 60 V and Gate−to−Source Voltage is ±20 V.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
These Devices are Pb−Free and are RoHS Compliant
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