onsemi NTM N-Channel MOSFET, 58 A, 1200 V N, 5-Pin DFN-5
- RS Stock No.:
- 244-9183P
- Mfr. Part No.:
- NTMFS3D2N10MDT1G
- Manufacturer:
- onsemi
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 244-9183P
- Mfr. Part No.:
- NTMFS3D2N10MDT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NTM | |
| Package Type | DFN-5 | |
| Mount Type | Through Hole | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 48nC | |
| Maximum Power Dissipation Pd | 117W | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Pb-Free, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NTM | ||
Package Type DFN-5 | ||
Mount Type Through Hole | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 48nC | ||
Maximum Power Dissipation Pd 117W | ||
Maximum Gate Source Voltage Vgs 22V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Pb-Free, RoHS | ||
Automotive Standard No | ||
The ON Semiconductor MOSFET used as Primary Switch in Isolated DC−DC Converter, Synchronous Rectification (SR) in DC−DC and AC−DC, AC−DC Adapters (USB PD) SR, Load Switch, Hotswap, O-ring Switch, BLDC Motor and Solar Inverter. Drain−to−Source Voltage and Gate−to−Source Voltage for this MOSFET is 100 V and ±20 V respectively.
Shielded Gate MOSFET Technology
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
Low QRR, Soft Recovery Body Diode
Low QOSS to Improve Light Load Efficiency
These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free and are RoHS Compliant
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