Infineon IPN Type N-Channel MOSFET, 100 A, 650 V, 3-Pin SOT-223 IPN60R360PFD7SATMA1

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Subtotal (1 pack of 5 units)*

PHP266.56

(exc. VAT)

PHP298.545

(inc. VAT)

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  • 2,630 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
5 - 5PHP53.312PHP266.56
10 - 95PHP50.626PHP253.13
100 - 245PHP48.116PHP240.58
250 - 495PHP45.696PHP228.48
500 +PHP43.456PHP217.28

*price indicative

Packaging Options:
RS Stock No.:
244-2269
Mfr. Part No.:
IPN60R360PFD7SATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

650V

Package Type

SOT-223

Series

IPN

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon 600V CoolMOS™ PFD7 superjunction MOSFET (IPN60R360PFD7S) complements the CoolMOS™ 7 offering for consumer applications. The IPN60R360PFD7S in a SOT-223 package features RDS(on) of 360mOhm resulting in low switching losses.

Very low FOM RDS(on) x Eoss

Integrated robust fast body diode

Up to 2kV ESD protection

Wide range of RDS(on) values

Excellent commutation ruggedness

Low EMI

Broad package portfolio

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