DiodesZetex DMN Type N-Channel MOSFET, 10.7 A, 12 V Enhancement, 10-Pin 4-DSN3015-10 DMN12M8UCA10-7
- RS Stock No.:
- 244-1915
- Mfr. Part No.:
- DMN12M8UCA10-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP907.975
(exc. VAT)
PHP1,016.925
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 4,925 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | PHP36.319 | PHP907.98 |
| 50 - 475 | PHP32.687 | PHP817.18 |
| 500 - 975 | PHP29.418 | PHP735.45 |
| 1000 + | PHP26.476 | PHP661.90 |
*price indicative
- RS Stock No.:
- 244-1915
- Mfr. Part No.:
- DMN12M8UCA10-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.7A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | DMN | |
| Package Type | 4-DSN3015-10 | |
| Mount Type | Surface | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 36.4nC | |
| Maximum Power Dissipation Pd | 1.73W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.03mm | |
| Standards/Approvals | No | |
| Height | 0.16mm | |
| Width | 1.54 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.7A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series DMN | ||
Package Type 4-DSN3015-10 | ||
Mount Type Surface | ||
Pin Count 10 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 36.4nC | ||
Maximum Power Dissipation Pd 1.73W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 3.03mm | ||
Standards/Approvals No | ||
Height 0.16mm | ||
Width 1.54 mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex MOSFET is designed to minimize the on state resistance yet maintain superior switching performance, making it ideal for high efficiency power management applications.
ESD protection of gate
Totally lead free and fully RoHS compliant
Halogen and antimony free green device
Related links
- DiodesZetex DMN Type N-Channel MOSFET 12 V Enhancement, 10-Pin 4-DSN3015-10
- DiodesZetex DMN Type N-Channel MOSFET 30 V Enhancement, 4-Pin TO-252 DMN3009SK3-13
- DiodesZetex DMN Type N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223 DMN6069SE-13
- STMicroelectronics PD5 Type N-Channel MOSFET 65 V Enhancement, 10-Pin PowerSO-10RF PD57060-E
- STMicroelectronics PD5 Type N-Channel MOSFET 65 V Enhancement, 10-Pin PowerSO-10RF PD57018-E
- STMicroelectronics Single LdmoST Type N-Channel MOSFET 40 V Enhancement, 10-Pin PowerSO
- onsemi NTM Type N-Channel MOSFET 80 V Enhancement, 10-Pin TCPAK10 NTMJST2D6N08HTXG
- onsemi NTM Type N-Channel MOSFET 60 V Enhancement, 10-Pin TCPAK57 NTMJST1D4N06CLTXG
