Infineon ISP Type P-Channel MOSFET, 2.8 A, 60 V Enhancement, 3-Pin SOT-223

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Subtotal (1 reel of 1000 units)*

PHP27,889.00

(exc. VAT)

PHP31,236.00

(inc. VAT)

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Units
Per Unit
Per Reel*
1000 - 1000PHP27.889PHP27,889.00
2000 - 2000PHP23.706PHP23,706.00
3000 +PHP22.521PHP22,521.00

*price indicative

RS Stock No.:
243-9269
Mfr. Part No.:
ISP12DP06NMXTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

2.8A

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-223

Series

ISP

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

81W

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon P-Channel small signal transistor have Pb-free lead plating. The drain current and drain-source voltage of MOSFET is -2.8 A and -60V respectively. It has very low resistance value. The operating temperature is ranges from -55 °C to 150 °C.

Surface Mount technology

Logic level availability

Easy interface to Microcontroller Unit (MCU)

Fast switching

avalanche ruggedness

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