Nexperia MOSFET, 10.3 A, 30 V TO-247

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Subtotal (1 tube of 30 units)*

PHP38,721.18

(exc. VAT)

PHP43,367.73

(inc. VAT)

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  • 30 unit(s) ready to ship from another location
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Units
Per Unit
Per Tube*
30 - 270PHP1,290.706PHP38,721.18
300 +PHP1,277.79PHP38,333.70

*price indicative

RS Stock No.:
243-4619
Mfr. Part No.:
GAN041-650WSBQ
Manufacturer:
Nexperia
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Brand

Nexperia

Product Type

MOSFET

Maximum Continuous Drain Current Id

10.3A

Maximum Drain Source Voltage Vds

30V

Package Type

TO-247

Mount Type

Through Hole

Maximum Drain Source Resistance Rds

13.6mΩ

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

81W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Nexperia Gallium Nitride (GaN) FET in a TO-247 package is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies offering superior reliability and performance.

Ultra-low reverse recovery charge

Simple gate drive (0 V to +10 V or 12 V)

Robust gate oxide (±20 V capability)

High gate threshold voltage (+4 V) for very good gate bounce immunity

Very low source-drain voltage in reverse conduction mode

Transient over-voltage capability

Hard and soft switching converters for industrial and datacom power

Bridgeless totempole PFC

PV and UPS inverters

Servo motor drives

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