Microchip TN5325 Type N-Channel MOSFET, 10.3 A, 650 V Enhancement, 3-Pin TO-92 TN5325K1-G

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PHP786.45

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PHP880.825

(inc. VAT)

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Units
Per Unit
Per Pack*
25 - 25PHP31.458PHP786.45
50 - 75PHP30.841PHP771.03
100 - 225PHP28.891PHP722.28
250 - 975PHP28.306PHP707.65
1000 +PHP27.753PHP693.83

*price indicative

Packaging Options:
RS Stock No.:
239-5618
Mfr. Part No.:
TN5325K1-G
Manufacturer:
Microchip
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Brand

Microchip

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10.3A

Maximum Drain Source Voltage Vds

650V

Series

TN5325

Package Type

TO-92

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

8Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

140W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.8V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Microchip TN5325 series of low-threshold, enhancement-mode (normally-off) transistor utilize a vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.

Low threshold of maximum 2V

High input impedance and high gain

Rise Time of 15 ns

Turn-off Delay Time of 25 ns

Fall Time of 25 ns

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