Microchip MSC025SMA120B N-Channel MOSFET, 140 A, 12 V TO-247
- RS Stock No.:
- 241-9253P
- Mfr. Part No.:
- MSC025SMA120B
- Manufacturer:
- Microchip
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal 5 units (supplied in a tube)*
PHP11,748.85
(exc. VAT)
PHP13,158.70
(inc. VAT)
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In Stock
- 264 unit(s) ready to ship from another location
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Units | Per Unit |
|---|---|
| 5 - 9 | PHP2,349.77 |
| 10 - 99 | PHP2,303.07 |
| 100 + | PHP2,200.68 |
*price indicative
- RS Stock No.:
- 241-9253P
- Mfr. Part No.:
- MSC025SMA120B
- Manufacturer:
- Microchip
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 140A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | TO-247 | |
| Series | MSC025SMA120B | |
| Mount Type | Through Hole | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Typical Gate Charge Qg @ Vgs | 232nC | |
| Maximum Gate Source Voltage Vgs | 2V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 140A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type TO-247 | ||
Series MSC025SMA120B | ||
Mount Type Through Hole | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Typical Gate Charge Qg @ Vgs 232nC | ||
Maximum Gate Source Voltage Vgs 2V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Microchip silicon carbide power MOSFET product line from Micro semi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high voltage applications.
Low capacitances and low gate charge
Fast switching speed due to low internal gate resistance
Stable operation at high junction temperature TJ(max)equal to 175 °C
Fast and reliable body diode
Superior avalanche ruggedness
RoHS compliant
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