Infineon IPL N-Channel MOSFET, 4.5 A, 800 V, 5-Pin ThinPAK 5x6
- RS Stock No.:
- 240-8547
- Mfr. Part No.:
- IPLK80R1K2P7ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 5000 units)*
PHP264,600.00
(exc. VAT)
PHP296,350.00
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Temporarily out of stock
- Shipping from January 28, 2027
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Units | Per Unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | PHP52.92 | PHP264,600.00 |
| 10000 - 10000 | PHP52.13 | PHP260,650.00 |
| 15000 + | PHP51.34 | PHP256,700.00 |
*price indicative
- RS Stock No.:
- 240-8547
- Mfr. Part No.:
- IPLK80R1K2P7ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | ThinPAK 5x6 | |
| Series | IPL | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.2mΩ | |
| Maximum Power Dissipation Pd | 43W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 3V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.42mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type ThinPAK 5x6 | ||
Series IPL | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.2mΩ | ||
Maximum Power Dissipation Pd 43W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 3V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Length 6.42mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon 800V CoolMOS™ P7 super junction MOSFET series is a perfect fit for low-power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, audio SMPS, AUX and industrial power. It offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK RDS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.
Best-in class FOM RDS(on)*Eoss; reduced Qg, Ciss, and Coss
Best-in-class DPAK RDS(on)
Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V
Integrated Zener Diode ESD protection
Fully optimized portfolio
Low EMI
The ThinPAK 5x6 package is characterized by a very small footprint of 5x6 mm² and a very low profile with a height of 1 mm and together with its benchmark low parasitic, these features lead to significantly smaller form factors and help to boost power density. This combination makes CoolMOS™ P7 in ThinPAK 5x6 a perfect fit for its target applications.
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