Infineon ISC Type N-Channel MOSFET, 330 A, 25 V, 8-Pin SuperSO8 5 x 6

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Subtotal (1 reel of 5000 units)*

PHP1,066,240.00

(exc. VAT)

PHP1,194,190.00

(inc. VAT)

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5000 - 5000PHP213.248PHP1,066,240.00
10000 - 10000PHP201.12PHP1,005,600.00
15000 +PHP185.96PHP929,800.00

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RS Stock No.:
240-6374
Mfr. Part No.:
ISC010N06NM5
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

330A

Maximum Drain Source Voltage Vds

25V

Package Type

SuperSO8 5 x 6

Series

ISC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.4mΩ

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

171W

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon OptiMOS™ 5 Single N-Channel Power MOSFET 60 V, 1.05 mΩ, 330 A in a SSO8 package. Infineon’s OptiMOS™ 5 Power MOSFET 60V in SuperSO8 package ISC010N06NM5 offers low on-state resistance RDS on at 25˚C and 175˚C, and high continuous current up to 330 A. Infineon's OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. Low reverse recovery charge Qrr improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.

Optimized for synchronous rectification

100% avalanche tested

Superior thermal resistance

N-channel

175°Crated

Pb-free lead plating; RoHS compliant

Halogen-free according to IEC61249-2-21

Higher solder joint reliability due to enlarged source interconnection

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