Nexperia Type N-Channel MOSFET, 11.4 A, 30 V Enhancement, 8-Pin MLPAK33 PXN8R3-30QLJ

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Subtotal (1 pack of 25 units)*

PHP375.925

(exc. VAT)

PHP421.025

(inc. VAT)

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Units
Per Unit
Per Pack*
25 - 25PHP15.037PHP375.93
50 - 75PHP14.586PHP364.65
100 - 225PHP14.002PHP350.05
250 - 975PHP13.302PHP332.55
1000 +PHP12.504PHP312.60

*price indicative

Packaging Options:
RS Stock No.:
240-1999
Mfr. Part No.:
PXN8R3-30QLJ
Manufacturer:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

11.4A

Maximum Drain Source Voltage Vds

30V

Package Type

MLPAK33

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

13.6mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

12.5W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Nexperia N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic-level compatible

Trench MOSFET technology

Ultra low QG and QGD for high system efficiency, especially at higher switching frequencies

Superfast switching with soft-recovery

Low spiking and ringing for low EMI designs

MLPAK33 package (3.3 x 3.3 mm footprint)

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