Microchip VP0109 Type P-Channel MOSFET, 140 A, 30 V Enhancement, 3-Pin TO-92 VP0109N3-G

RS Stock No.:: 236-8964P
Mfr. Part No.:: VP0109N3-G
Manufacturer:: Microchip

Microchip VP0109 Type P-Channel MOSFET, 140 A, 30 V Enhancement, 3-Pin TO-92 VP0109N3-G

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RS Stock No.:: 236-8964P
Mfr. Part No.:: VP0109N3-G
Manufacturer:: Microchip

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Microchip
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	140A
	Maximum Drain Source Voltage Vds	30V
	Series	VP0109
	Package Type	TO-92
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	8mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.8V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Maximum Power Dissipation Pd	1.6W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No
	Series	VP0109
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current (Id)	140 A
	Maximum Drain Source Voltage (Vds)	30 V
	Channel Mode	Enhancement
	Pin Count	3
	Package Type	TO-92
	Automotive Standard	No
	Forward Voltage (Vf)	1.8 V
	Maximum Drain Source Resistance (Rds)	8 mΩ
	Maximum Gate Source Voltage (Vgs)	20 V
	Maximum Operating Temperature	150 °C
	Maximum Power Dissipation (Pd)	1.6 W
	Minimum Operating Temperature	-55 °C
	Mount Type	Through Hole
	Standards/Approvals	No

	Select all
	Brand Microchip
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 140A
	Maximum Drain Source Voltage Vds 30V
	Series VP0109
	Package Type TO-92
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 8mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.8V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Maximum Power Dissipation Pd 1.6W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No
	Series VP0109
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current (Id) 140 A
	Maximum Drain Source Voltage (Vds) 30 V
	Channel Mode Enhancement
	Pin Count 3
	Package Type TO-92
	Automotive Standard No
	Forward Voltage (Vf) 1.8 V
	Maximum Drain Source Resistance (Rds) 8 mΩ
	Maximum Gate Source Voltage (Vgs) 20 V
	Maximum Operating Temperature 150 °C
	Maximum Power Dissipation (Pd) 1.6 W
	Minimum Operating Temperature -55 °C
	Mount Type Through Hole
	Standards/Approvals No

Datasheet - VP0109N3-G

The Microchip enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. The vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low CISS and fast switching speeds

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

Microchip VP0109 Type P-Channel MOSFET, 140 A, 30 V Enhancement, 3-Pin TO-92 VP0109N3-G

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