Infineon CoolMOS Type N-Channel MOSFET, 15 A, 700 V, 3-Pin TO-220 IPP65R155CFD7XKSA1
- RS Stock No.:
- 236-3666
- Mfr. Part No.:
- IPP65R155CFD7XKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP912.00
(exc. VAT)
PHP1,021.45
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 440 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP182.40 | PHP912.00 |
| 10 - 95 | PHP167.126 | PHP835.63 |
| 100 - 245 | PHP154.322 | PHP771.61 |
| 250 - 495 | PHP143.312 | PHP716.56 |
| 500 + | PHP139.27 | PHP696.35 |
*price indicative
- RS Stock No.:
- 236-3666
- Mfr. Part No.:
- IPP65R155CFD7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-220 | |
| Series | CoolMOS | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 155mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 77W | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.57 mm | |
| Length | 10.36mm | |
| Height | 9.45mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-220 | ||
Series CoolMOS | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 155mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 77W | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Width 4.57 mm | ||
Length 10.36mm | ||
Height 9.45mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolMOS super junction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies. It is ideally suited for industrial applications, such as server, telecom, solar, and EV-charging stations, in which it enables significant efficiency improvements compared to competition. It has drain current of 15 A.
Excellent hard-commutation ruggedness
Extra safety margin for designs with increased bus voltage
Enabling increased power density
Outstanding light-load efficiency in industrial SMPS applications
Improved full-load efficiency in industrial SMPS applications
Price competitiveness compared to alternative offerings in the market
Related links
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- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET 700 V N, 3-Pin TO-220 IPAN70R600P7SXKSA1
- Infineon CoolMOS Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-220 IPP65R225C7XKSA1
