Infineon ISZ080N10 Type N-Channel MOSFET, 75 A, 100 V, 8-Pin TSDSON ISZ080N10NM6ATMA1

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Subtotal (1 reel of 5000 units)*

PHP248,460.00

(exc. VAT)

PHP278,275.00

(inc. VAT)

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Units
Per Unit
Per Reel*
5000 - 5000PHP49.692PHP248,460.00
10000 - 10000PHP47.208PHP236,040.00
15000 +PHP44.847PHP224,235.00

*price indicative

RS Stock No.:
235-4882
Mfr. Part No.:
ISZ080N10NM6ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

75A

Maximum Drain Source Voltage Vds

100V

Series

ISZ080N10

Package Type

TSDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

8.04mΩ

Typical Gate Charge Qg @ Vgs

24nC

Maximum Power Dissipation Pd

100W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

3.4mm

Width

1.1 mm

Length

3.4mm

Automotive Standard

No

The Infineon OptiMOS™ 6 industrial power MOSFET 100V is designed for high switching frequency application such as telecom and server power supply, but also the Ideal choice for other applications such as solar, power tools and drones. Compared to alternative products, Infineon’s leading thin wafer technology is enabling significant performance benefits.

Lower and softer reverse recovery charge

Ideal for high switching frequency

High avalanche energy rating

RoHS compliant

Low conduction losses

Low switching losses

Environmentally friendly

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