ROHM Type N-Channel MOSFET, 11 A, 650 V Enhancement, 3-Pin TO-252 R6511END3TL1

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Subtotal (1 pack of 5 units)*

PHP542.35

(exc. VAT)

PHP607.45

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 45PHP108.47PHP542.35
50 - 95PHP97.626PHP488.13
100 - 245PHP87.862PHP439.31
250 - 995PHP79.076PHP395.38
1000 +PHP71.168PHP355.84

*price indicative

Packaging Options:
RS Stock No.:
235-2694
Mfr. Part No.:
R6511END3TL1
Manufacturer:
ROHM
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Brand

ROHM

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

400mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

125W

Typical Gate Charge Qg @ Vgs

32nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

10.4mm

Length

6.4mm

Width

2.4 mm

Automotive Standard

No

The ROHM R6xxxENx series are low-noise products, super Junction MOSFET, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.

Low on-resistance

Fast switching speed

Parallel use is easy

Pb-free plating

RoHS compliant

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