ROHM QH8KC6 Type N-Channel MOSFET, 5.5 A, 60 V Enhancement, 8-Pin TSMT-8 QH8KC6TCR
- RS Stock No.:
- 235-2670
- Mfr. Part No.:
- QH8KC6TCR
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP529.20
(exc. VAT)
PHP592.70
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 20 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 40 | PHP52.92 | PHP529.20 |
| 50 - 90 | PHP51.827 | PHP518.27 |
| 100 - 240 | PHP41.992 | PHP419.92 |
| 250 - 990 | PHP40.666 | PHP406.66 |
| 1000 + | PHP39.885 | PHP398.85 |
*price indicative
- RS Stock No.:
- 235-2670
- Mfr. Part No.:
- QH8KC6TCR
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TSMT-8 | |
| Series | QH8KC6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.5W | |
| Typical Gate Charge Qg @ Vgs | 7.6nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.1mm | |
| Height | 2.9mm | |
| Standards/Approvals | No | |
| Width | 0.85 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TSMT-8 | ||
Series QH8KC6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.5W | ||
Typical Gate Charge Qg @ Vgs 7.6nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 3.1mm | ||
Height 2.9mm | ||
Standards/Approvals No | ||
Width 0.85 mm | ||
Automotive Standard No | ||
The ROHM dual N channel MOSFET which supports 60V withstand voltage. This is designed for 24V input equipment's such as factory automation equipment's, and motors mounted on base stations. This product consists of a low on-resistance N channel MOSFET which is reduced 58%. This contributes to low power consumption of various devices.
Small surface mount package
Pb-free lead plating
RoHS compliant
Halogen Free
Related links
- ROHM QH8KC6 Type N-Channel MOSFET 60 V Enhancement, 8-Pin TSMT-8 QH8KC6TCR
- ROHM QH8KC5 Type N-Channel MOSFET 60 V Enhancement, 8-Pin TSMT-8 QH8KC5TCR
- ROHM QH8KB5 Type N-Channel MOSFET 40 V Enhancement, 8-Pin TSMT-8 QH8KB5TCR
- ROHM QH8 2 Type N-Channel MOSFET 8-Pin TSMT-8 QH8KE5TCR
- ROHM QH8MC5 Type N 3.5 A 8-Pin TSMT-8 QH8MC5TCR
- ROHM QH8KB6 Type N-Channel MOSFET 40 V Enhancement, 8-Pin TSMT-8 QH8KB6TCR
- ROHM QH8MB5 Type P 5 A 8-Pin TSMT-8 QH8MB5TCR
- ROHM QS8 2 Type N 100 V Enhancement, 8-Pin TSMT-8 QS8M51HZGTR