Renesas Electronics BEAM Type N-Channel MOSFET, 50 A, 30 V Enhancement, 8-Pin WPAK RJK0391DPA-00#J5A
- RS Stock No.:
- 234-7153P
- Mfr. Part No.:
- RJK0391DPA-00#J5A
- Manufacturer:
- Renesas Electronics
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 234-7153P
- Mfr. Part No.:
- RJK0391DPA-00#J5A
- Manufacturer:
- Renesas Electronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | WPAK | |
| Series | BEAM | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0029Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 50W | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Pb-Free, Halogen-Free | |
| Height | 0.85mm | |
| Length | 6.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type WPAK | ||
Series BEAM | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0029Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 50W | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Pb-Free, Halogen-Free | ||
Height 0.85mm | ||
Length 6.1mm | ||
Automotive Standard No | ||
The Renesas Electronics N-channel single power MOSFET suitable for switching and load switch applications. It has high breakdown voltage of 30 V. It is capable of 4.5 V gate drive.
High speed switching
Low drive current
High density mounting
Low on-resistance
Pb-free
Halogen-free
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