Renesas Electronics Type N-Channel MOSFET, 4 A, 1500 V Enhancement, 3-Pin TO-3PN 2SK1835-E

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Subtotal (1 unit)*

PHP1,370.57

(exc. VAT)

PHP1,535.04

(inc. VAT)

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1 - 4PHP1,370.57
5 - 9PHP1,342.83
10 - 29PHP1,238.86
30 +PHP1,181.09

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Packaging Options:
RS Stock No.:
234-7062
Mfr. Part No.:
2SK1835-E
Manufacturer:
Renesas Electronics
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Brand

Renesas Electronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

1500V

Package Type

TO-3PN

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

4.6Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

125W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

20.1 mm

Standards/Approvals

No

Length

15.9mm

Height

5mm

Automotive Standard

No

The Renesas Electronics silicon N-channel MOSFET suitable for switching and load switch applications. It has high breakdown voltage of 1500 V. It is also suitable for switching regulator.

Low on-resistance

High-speed switching

High-robustness

Low drive current

No secondary breakdown

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