Infineon ISC Type N-Channel MOSFET, 193 A, 40 V, 8-Pin TDSON-8 FL ISC017N04NM5ATMA1

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Subtotal (1 reel of 5000 units)*

PHP200,450.00

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PHP224,500.00

(inc. VAT)

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5000 - 5000PHP40.09PHP200,450.00
10000 - 10000PHP38.086PHP190,430.00
15000 +PHP36.181PHP180,905.00

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RS Stock No.:
234-6994
Mfr. Part No.:
ISC017N04NM5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

193A

Maximum Drain Source Voltage Vds

40V

Package Type

TDSON-8 FL

Series

ISC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.7mΩ

Typical Gate Charge Qg @ Vgs

67nC

Maximum Power Dissipation Pd

115W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

4.4mm

Standards/Approvals

No

Width

1.1 mm

Height

3.8mm

Automotive Standard

No

The Infineon OptiMOS 5 power transistor N-channel MOSFET has 40V drain source breakdown voltage and 193A continuous drain current. This product offers a Benchmark solution for applications requiring normal level (higher threshold voltage) drive capability. The high Vth in the normal level portfolio offers immunity to false turn-on due to noisy environments. In addition, lower QGD/QGS ratios reduce the Peak of the gate voltage spikes, further contributing to the robustness against unwanted turn-on.

Battery powered application

LV motor drives

Very low on-resistanceRDS(on)

100% avalanche tested

175°C junction temperature

Superior thermal resistance

Low gate charge

Reduced switching losses

Suitable for operation at higher frequencies

N-channel

Pb-free lead plating

RoHS compliant

Halogen-free according to IEC61249-2-21

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