STMicroelectronics SCTWA70N120G2V-4 Type N-Channel MOSFET, 91 A, 1200 V Enhancement, 4-Pin Hip-247 SCTWA70N120G2V-4
- RS Stock No.:
- 233-0475
- Mfr. Part No.:
- SCTWA70N120G2V-4
- Manufacturer:
- STMicroelectronics
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Units | Per Unit |
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| 1 - 4 | PHP5,508.36 |
| 5 - 9 | PHP5,398.44 |
| 10 - 14 | PHP5,290.28 |
| 15 - 19 | PHP5,183.91 |
| 20 + | PHP5,081.08 |
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- RS Stock No.:
- 233-0475
- Mfr. Part No.:
- SCTWA70N120G2V-4
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 91A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Hip-247 | |
| Series | SCTWA70N120G2V-4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2.7V | |
| Maximum Power Dissipation Pd | 547W | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Maximum Operating Temperature | 200°C | |
| Length | 34.8mm | |
| Height | 5mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 91A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Hip-247 | ||
Series SCTWA70N120G2V-4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2.7V | ||
Maximum Power Dissipation Pd 547W | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Maximum Operating Temperature 200°C | ||
Length 34.8mm | ||
Height 5mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Very high operating junction temperature capability (TJ = 200 °C)
Source sensing pin for increased efficiency
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