Infineon OptiMOS 5 Type N-Channel MOSFET, 59 A, 100 V, 8-Pin SO-8
- RS Stock No.:
- 232-6761
- Mfr. Part No.:
- ISC0804NLSATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 5000 units)*
PHP256,500.00
(exc. VAT)
PHP287,300.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 5,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | PHP51.30 | PHP256,500.00 |
| 10000 - 10000 | PHP48.735 | PHP243,675.00 |
| 15000 + | PHP46.298 | PHP231,490.00 |
*price indicative
- RS Stock No.:
- 232-6761
- Mfr. Part No.:
- ISC0804NLSATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 59A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SO-8 | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 14.9mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 60W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 1.2 mm | |
| Height | 5.35mm | |
| Standards/Approvals | No | |
| Length | 6.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 59A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SO-8 | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 14.9mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 60W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Operating Temperature 175°C | ||
Width 1.2 mm | ||
Height 5.35mm | ||
Standards/Approvals No | ||
Length 6.1mm | ||
Automotive Standard No | ||
The Infineon's OptiMOS PD power MOSFET 100 V, are designed targeting USB-PD and adapter applications. It's SuperSO8 package offers fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.
Logic level availability
Excellent thermal behaviour
100% avalanche tested
Related links
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V, 8-Pin SO-8 ISC0804NLSATMA1
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V, 8-Pin SO-8
- Infineon OptiMOS 5 Type N-Channel MOSFET 80 V, 8-Pin SO-8
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V, 8-Pin SO-8
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V, 8-Pin SO-8
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V, 8-Pin SO-8
- Infineon OptiMOS 5 Type N-Channel MOSFET 60 V, 8-Pin SO-8
- Infineon OptiMOS 5 Type N-Channel MOSFET 100 V, 8-Pin SO-8