onsemi SUPERFET V Type N-Channel MOSFET, 33 A, 600 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 450 units)*

PHP176,047.20

(exc. VAT)

PHP197,172.90

(inc. VAT)

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Units
Per Unit
Per Tube*
450 - 450PHP391.216PHP176,047.20
900 +PHP384.803PHP173,161.35

*price indicative

RS Stock No.:
230-9088
Mfr. Part No.:
NTHL099N60S5
Manufacturer:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-247

Series

SUPERFET V

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

99mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

184W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

48nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

175°C

Width

4.82 mm

Height

41.07mm

Standards/Approvals

No

Length

15.87mm

Automotive Standard

No

The ON Semiconductor series SUPERFET V MOSFET is the fifth generation high voltage super−junction (SJ) MOSFET family from ON Semiconductor. SUPERFET V delivers best−in−class FOMs (RDS(ON)·QG and RDS(ON)·EOSS) to improve not only heavy load but also light load efficiency. The 600 V SUPERET V series provides design benefits through reduced conduction and switching losses, while supporting extreme MOSFET dVDS/dt ratings at 120 V/ns and high body diode dVDS/dt ratings at 50 V/ns. Consequently, the SUPERFET V MOSFET Easy Drive series combines excellent switching performance without sacrificing ease of use for both hard and soft switching topologies. It helps manage EMI issues and allows for easier design implementation with excellent system efficiency.

Ultra Low Gate Charge (Typ. Qg= 48 nC)

Low switching loss

Low Time Related Output Capacitance (Typ. Coss(tr.)= 642 pF)

Low switching loss

Optimized Capacitance

Lower peak Vds and lower Vgs oscillation

650 V @ TJ = 150°C

Typ. RDS(on) = 79.2 m Ω

100% Avalanche Tested

RoHS Compliant

Internal Gate Resistance: 6.9 Ω

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