onsemi Type N-Channel MOSFET, 175 A, 150 V N, 8-Pin DFN
- RS Stock No.:
- 229-6484
- Mfr. Part No.:
- NTMTS4D3N15MC
- Manufacturer:
- onsemi
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 229-6484
- Mfr. Part No.:
- NTMTS4D3N15MC
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 175A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 293W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 79nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Length | 8.1mm | |
| Height | 8.5mm | |
| Width | 1.2 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 175A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 293W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 79nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Length 8.1mm | ||
Height 8.5mm | ||
Width 1.2 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor N-Channel MOSFET is produced using advanced power trench process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance.
Minimize conduction losses
High peak current and low parasitic inductance
Offers a wider design margin for thermally challenged applications
Reduces switching spike
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