onsemi NTMFS N-Channel MOSFET, 61 A, 80 V N, 8-Pin DFN
- RS Stock No.:
- 229-6475P
- Mfr. Part No.:
- NTMFSC010N08M7
- Manufacturer:
- onsemi
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 229-6475P
- Mfr. Part No.:
- NTMFSC010N08M7
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 61A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | NTMFS | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 78.1W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 5.1mm | |
| Width | 950μm | |
| Length | 6.25mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 61A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series NTMFS | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 78.1W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 5.1mm | ||
Width 950μm | ||
Length 6.25mm | ||
Automotive Standard No | ||
The ON Semiconductor N-Channel MOSFET is produced using an advanced power trench process. advancements in both silicon and dual cool package technologies have been combined to offer the lowest on state resistance while maintaining excellent switching performance by extremely low junction to ambient thermal resistance.
Improved package thermal capability
Reduces conduction loss
Improved system efficiency
Package material comply with latest requirements
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