onsemi NTMFS N-Channel MOSFET, 110 A, 100 V N, 8-Pin PQFN
- RS Stock No.:
- 229-6473P
- Mfr. Part No.:
- NTMFS7D8N10GTWG
- Manufacturer:
- onsemi
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 229-6473P
- Mfr. Part No.:
- NTMFS7D8N10GTWG
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PQFN | |
| Series | NTMFS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.6mΩ | |
| Channel Mode | N | |
| Typical Gate Charge Qg @ Vgs | 92nC | |
| Maximum Power Dissipation Pd | 187W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.84V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Length | 5mm | |
| Height | 6mm | |
| Width | 1.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PQFN | ||
Series NTMFS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.6mΩ | ||
Channel Mode N | ||
Typical Gate Charge Qg @ Vgs 92nC | ||
Maximum Power Dissipation Pd 187W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.84V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Length 5mm | ||
Height 6mm | ||
Width 1.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor N-channel MOSFET is produced using advanced power trench process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Minimize conduction losses
High peak UIS current capability for ruggedness
Halogen-free
Pb-free
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