onsemi NTMF Type N-Channel MOSFET, 79 A, 120 V P, 8-Pin SO-8 NTMFS008N12MCT1G
- RS Stock No.:
- 229-6467
- Mfr. Part No.:
- NTMFS008N12MCT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP760.48
(exc. VAT)
PHP851.74
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from May 29, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP152.096 | PHP760.48 |
| 10 - 95 | PHP147.53 | PHP737.65 |
| 100 - 245 | PHP142.97 | PHP714.85 |
| 250 - 495 | PHP139.928 | PHP699.64 |
| 500 + | PHP136.886 | PHP684.43 |
*price indicative
- RS Stock No.:
- 229-6467
- Mfr. Part No.:
- NTMFS008N12MCT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 79A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | NTMF | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | P | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 102W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Width | 1.1 mm | |
| Length | 6.3mm | |
| Height | 5.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 79A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series NTMF | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode P | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 102W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Width 1.1 mm | ||
Length 6.3mm | ||
Height 5.3mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor N-channel power MOSFET flat lead package designed for compact and efficient designs and including high thermal performance. It is used switching power supplies, power switches, battery management and protection.
Minimize conduction losses
Minimize driver losses
RoHS compliant
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