Infineon AUIRF Type N-Channel MOSFET, 545 A, 40 V Enhancement, 15-Pin DirectFET
- RS Stock No.:
- 229-1737
- Mfr. Part No.:
- AUIRF8739L2TR
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 4000 units)*
PHP1,074,396.00
(exc. VAT)
PHP1,203,324.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from November 22, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 4000 - 4000 | PHP268.599 | PHP1,074,396.00 |
| 8000 - 8000 | PHP260.541 | PHP1,042,164.00 |
| 12000 + | PHP252.725 | PHP1,010,900.00 |
*price indicative
- RS Stock No.:
- 229-1737
- Mfr. Part No.:
- AUIRF8739L2TR
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 545A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DirectFET | |
| Series | AUIRF | |
| Mount Type | Surface | |
| Pin Count | 15 | |
| Maximum Drain Source Resistance Rds | 0.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 375nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 340W | |
| Maximum Gate Source Voltage Vgs | 40 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 9.15mm | |
| Height | 0.74mm | |
| Width | 7.1 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 545A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DirectFET | ||
Series AUIRF | ||
Mount Type Surface | ||
Pin Count 15 | ||
Maximum Drain Source Resistance Rds 0.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 375nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 340W | ||
Maximum Gate Source Voltage Vgs 40 V | ||
Maximum Operating Temperature 175°C | ||
Length 9.15mm | ||
Height 0.74mm | ||
Width 7.1 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon single n channel HEXFET power MOSFET in a DirectFET L8 package allows repetitive avalanche up to Tjmax. It has fast switching speed and it is lead free.
It is RoHS compliant and AEC qualified
It has 175°C operating temperature
It has dual sided cooling
Related links
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