Infineon AUIRF Type P-Channel MOSFET, 13 A, 100 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 229-1741
- Mfr. Part No.:
- AUIRFR5410TRL
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 3000 units)*
PHP279,663.00
(exc. VAT)
PHP313,224.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 6,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | PHP93.221 | PHP279,663.00 |
| 6000 - 6000 | PHP90.424 | PHP271,272.00 |
| 9000 + | PHP87.712 | PHP263,136.00 |
*price indicative
- RS Stock No.:
- 229-1741
- Mfr. Part No.:
- AUIRFR5410TRL
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | AUIRF | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 205mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.6V | |
| Maximum Power Dissipation Pd | 66W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.39mm | |
| Length | 6.22mm | |
| Standards/Approvals | No | |
| Width | 6.73 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series AUIRF | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 205mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.6V | ||
Maximum Power Dissipation Pd 66W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 2.39mm | ||
Length 6.22mm | ||
Standards/Approvals No | ||
Width 6.73 mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon p channel MOSFET utilizes the latest processing techniques to achieve low on resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications.
It is lead free
It is RoHS compliant
Related links
- Infineon AUIRF Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 AUIRFR5410TRL
- Infineon AUIRF Type P-Channel MOSFET 150 V Enhancement, 3-Pin TO-252
- Infineon AUIRF Type P-Channel MOSFET 150 V Enhancement, 3-Pin TO-252 AUIRFR6215TRL
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- Infineon AUIRF Type P-Channel MOSFET 150 V Enhancement, 3-Pin TO-263 AUIRF6215STRL
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IRFR5410TRPBF
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IRFR5410TRLPBF