Vishay TrenchFET Type P-Channel MOSFET, 150 A, 80 V Enhancement, 3-Pin TO-220 SUP60061EL-GE3
- RS Stock No.:
- 228-2990
- Mfr. Part No.:
- SUP60061EL-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP474.24
(exc. VAT)
PHP531.14
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 84 unit(s) ready to ship from another location
- Plus 628 unit(s) shipping from January 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP237.12 | PHP474.24 |
| 10 - 48 | PHP213.915 | PHP427.83 |
| 50 - 98 | PHP201.26 | PHP402.52 |
| 100 - 248 | PHP175.52 | PHP351.04 |
| 250 + | PHP172.15 | PHP344.30 |
*price indicative
- RS Stock No.:
- 228-2990
- Mfr. Part No.:
- SUP60061EL-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-220 | |
| Series | TrenchFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -0.8V | |
| Typical Gate Charge Qg @ Vgs | 145nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-220 | ||
Series TrenchFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -0.8V | ||
Typical Gate Charge Qg @ Vgs 145nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay P-Channel 80 V (D-S) MOSFET.
100 % Rg and UIS tested
Related links
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