Vishay Dual TrenchFET 2 N-Channel MOSFET, 32.5 A, 70 V Enhancement, 8-Pin PowerPAIR 3 x 3S SiZ254DT-T1-GE3

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Subtotal (50 units, supplied on a continuous strip)*

PHP3,693.80

(exc. VAT)

PHP4,137.05

(inc. VAT)

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  • 3,670 unit(s) ready to ship from another location
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Units
Per Unit
50 - 90PHP73.876
100 - 240PHP69.445
250 - 990PHP63.194
1000 +PHP55.609

*price indicative

Packaging Options:
RS Stock No.:
228-2935P
Mfr. Part No.:
SiZ254DT-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

32.5A

Maximum Drain Source Voltage Vds

70V

Series

TrenchFET

Package Type

PowerPAIR 3 x 3S

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0161Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

13nC

Maximum Power Dissipation Pd

33W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20V

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Number of Elements per Chip

2

Automotive Standard

No

The Vishay Dual N-Channel 70 V (D-S) MOSFET.

100 % Rg and UIS tested

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