Vishay TrenchFET Type N-Channel MOSFET, 20 A, 100 V Enhancement, 8-Pin PowerPAK 1212 SiSH892BDN-T1-GE3

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 10 units)*

PHP392.00

(exc. VAT)

PHP439.00

(inc. VAT)

Add to Basket
Select or type quantity
Last RS stock
  • Final 5,970 unit(s), ready to ship from another location
Units
Per Unit
Per Pack*
10 - 40PHP39.20PHP392.00
50 - 90PHP38.025PHP380.25
100 - 240PHP35.744PHP357.44
250 - 990PHP32.527PHP325.27
1000 +PHP28.624PHP286.24

*price indicative

Packaging Options:
RS Stock No.:
228-2931
Mfr. Part No.:
SiSH892BDN-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK 1212

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

30.4mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

17.4nC

Maximum Power Dissipation Pd

29W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay N-Channel 100 V (D-S) MOSFET PowerPAK.

100 % Rg and UIS tested

Related links